ETUDE DE L'EFFET REDRESSEUR DU COUPLE ZNO OBTENU PAR LES ZNS, ZNSO₃ ET NI₂O₃ TRAITES THERMIQUEMENTSPASOVA E.1973; GOD. VISSH. TECKH. UCHEBN. ZAVED., FIZ.; BALG.; DA. 1973 PARU 1975; VOL. 10; NO 2; PP. 79-82; ABS. RUSSE ANGL.; BIBL. 5 REF.Article

INFLUENCE DE L'IMPURETE CADMIUM DANS LES COUCHES DE SULFURE DE CUIVRE SUR L'EFFET PHOTOREDRESSEUR DES HETEROJONCTIONS CU_2-XS_P-CDS_PKANTARIYA RV; PAVELETS S YU; FEDORUS GA et al.1980; UKR. FIZ. Z. (KIEV, 1967); ISSN 0503-1265; UKR; DA. 1980; VOL. 25; NO 11; PP. 1806-1809; ABS. ENG; BIBL. 6 REF.Article

Enormously Enhanced Rectifying Performances by Modification of Carbon Chains for D―σ―A Molecular DevicesGUO, C; ZHANG, Z. H; KWONG, G et al.Journal of physical chemistry. C. 2012, Vol 116, Num 23, pp 12900-12905, issn 1932-7447, 6 p.Article

Reducing standby power applied to SR forward converters with transient load response consideredYAU, Y. T; HWU, K. I; CHOU, Yung-Shan et al.MWSCAS : Midwest symposium on circuits and systems. 2004, isbn 0-7803-8346-X, 3Vol, Vol II, 313-316Conference Paper

Effets redresseurs des couches d'inversion 2D dans un champ magnétique parallèleFAL'KO, V. I.Fizika tverdogo tela. 1989, Vol 31, Num 4, pp 29-32, issn 0367-3294Article

MIS DIODE STRUCTURE IN AS⁺-IMPLANTED CDS. INCREASED TURNOVER VOLTAGE SUGGESTS METAL-INSULATOR-SEMICONDUCTOR STRUCTURE.1978; SOLID STATE TECHNOL.; U.S.A.; DA. 1978; VOL. 21; NO 4; PP. 78Article

RECTIFIER EFFECT IN THE I-V CHARACTERISTIC OF NI-NIO-NI THIN FILMS.GVISHI M.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 35; NO 1; PP. L1-L5; BIBL. 13 REF.Article

RECTIFICATION PHENOMENA AND PHOTOVOLTAIC EFFECTS IN AN AMORPHOUS SE_1-X1TE_X1-SE_1-X2TE_X2 HETEROSTRUCTUREKIKUCHI T; EMA Y; HAYASHI T et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 5043-5044; BIBL. 4 REF.Article

Nanofluidic diodeVLASSIOUK, Ivan; SIWY, Zuzanna S.Nano letters (Print). 2007, Vol 7, Num 3, pp 552-556, issn 1530-6984, 5 p.Article

Blue and green electroluminescence from a porous silicon deviceSTEINER, P; KOZLOWSKI, F; LANG, W et al.IEEE electron device letters. 1993, Vol 14, Num 7, pp 317-319, issn 0741-3106Article

AC/DC Rectification With Indium Gallium Oxide Thin-Film TransistorsMCFARLANE, Brian R; KURAHASHI, Peter; HEINECK, Daniel P et al.IEEE electron device letters. 2010, Vol 31, Num 4, pp 314-316, issn 0741-3106, 3 p.Article

Methodology for fast identification of EMI-induced operating point shift in analogue circuitsLOECKX, J; GIELEN, G.Electronics Letters. 2007, Vol 43, Num 23, pp 1261-1263, issn 0013-5194, 3 p.Article

Rectifying properties of bilayered doped poly(vinyl alcohol)HUNDAL, J. S; KAURA, T.International journal of electronics. 1998, Vol 84, Num 2, pp 117-122, issn 0020-7217Article

Photovoltaic effect based on wet poly(vinyl alcohol)/merocyanine dye junctionUEHARA, K; TAKAGISHI, K; TANAKA, M et al.Journal of applied polymer science. 1988, Vol 35, Num 7, pp 1759-1767, issn 0021-8995Article

Contribution of the spreading resistance to high-frequency rectification in metal-metal point contactsVAN DER HEIJDEN, R. W; SWARTJES, H. M; WYDER, P et al.Journal of applied physics. 1984, Vol 55, Num 4, pp 1003-1011, issn 0021-8979Article

Effet photoélectrique d'hétérojonctions In2O3/CuInSe2 obtenues par oxydation thermiqueMEDVEDKIN, G. A; RUD, YU. V; TAIROV, M. A et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 5, pp 869-872, issn 0015-3222Article

Temperature-Gated Thermal Rectifier for Active Heat Flow ControlJIA ZHU; HIPPALGAONKAR, Kedar; SHENG SHEN et al.Nano letters (Print). 2014, Vol 14, Num 8, pp 4867-4872, issn 1530-6984, 6 p.Article

Pyramid-Shape Tris(8-hydroxyquinoline) Aluminum Schottky DiodeLO, Shih-Shou; SHU HAO SIE.Journal of physical chemistry. C. 2012, Vol 116, Num 30, pp 16122-16126, issn 1932-7447, 5 p.Article

A Trial Thermal RectifierKOBAYASHI, W; TERAOKA, Y; TERASAKI, I et al.Journal of electronic materials. 2010, Vol 39, Num 9, pp 1488-1492, issn 0361-5235, 5 p.Conference Paper

A novel all-plastic diode based upon pure polyaniline materialCHUN ZHAO; SHUANGXI XING; YOUHAI YU et al.Microelectronics journal. 2007, Vol 38, Num 3, pp 316-320, issn 0959-8324, 5 p.Article

Novel architectures of class AB CMOS mirrors with programmable gainDURBHA, Chandrika; RAMIREZ-ANGULO, Jaime; LOPEZ-MARTIN, Antonio J et al.IEEE International Symposium on Circuits and Systems. 2004, pp 760-763, isbn 0-7803-8251-X, 4 p.Conference Paper

RECTIFICATION AT N-N GAAS: (GA, AL) AS HETEROJUNCTIONSCHANDRA A; EASTMAN LF.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 3; PP. 90-91; BIBL. 9 REF.Article

EVIDENCE OF MINORITY-CARRIER INJECTION IN (N-N) SNO₂-GE HETEROJUNCTION DIODESLEGGE RN; WANG EY.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 6035-6036; BIBL. 10 REF.Article

MODELING OF LOW-LEVEL RECTIFICATION RFI IN BIPOLAR CIRCUITRYRICHARDSON RE JR.1979; I.E.E.E. TRANS. ELECTROMAGN. COMPATIB.; USA; DA. 1979; VOL. 21; NO 4; PP. 307-311; BIBL. 9 REF.Article

THE IMPORTANCE OF GEOMETRY, FIELD AND TEMPERATURE IN TUNNELING AND RECTIFICATION BEHAVIOR OF POINT CONTACT JUNCTIONS OF IDENTICAL METALSMISKOVSKY NM; SHEPHERD SJ; CUTLER PH et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 7; PP. 560-562; BIBL. 29 REF.Article